Metal oxide semiconductor field effect (MOS) transistors can be divided into N-channel and P-channel. P-channel silicon MOS field-effect transistors have two P+ regions on the N-type silicon substrate, which are called source and The drain is not conductive between the two poles, and when a sufficient positive voltage (gate ground) is applied to the source, the surface of the N-type silicon under the gate exhibits a P-type inversion layer, which becomes a channel connecting the source and the drain. . Changing the gate voltage changes the density of the holes in the channel, thereby changing the resistance of the channel. Such a MOS Field Effect Transistor is called a P-channel enhancement type field effect transistor. If the surface of the N-type silicon substrate is free of gate voltage, the P-type inversion layer channel already exists, and the appropriate bias voltage can increase or decrease the resistance of the channel. Such a MOS field effect transistor is referred to as a P-channel depletion field effect transistor. They are collectively referred to as PMOS transistors. P Channel Mosfet,P Channel Power Mosfet,Field Effect Transistor,Field Effect Transistor Symbol Dongguan Agertech Technology Co., Ltd. , https://www.agertechcomponents.com
At the same time, Philips also said that lighting equipment will still rely on rare earth metals, but the proportion will be reduced, the company's laboratory has found ways to significantly reduce the use of rare earth metals. 
Philips develops new technology to reduce the use of rare earth metals in LED lighting equipment
Due to China's control of rare earth exports, companies in many countries have managed to reduce their reliance on rare earth metals. Royal Philips Electronic said it has begun to develop new technologies that drastically reduce the rare earth metal composition of LED lighting equipment.